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Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications

机译：（In，Ga）As / GaP量子点和（GaAsPN / GaPN）稀释的氮化物纳米层的结构和光学性质相干生长在GaP和Si衬底上，用于光子学和光伏应用

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International audience

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作者
Durand, Olivier; Robert, Cédric; Nguyen, Thanh Tra; Almosni, Samy; Quinci, Thomas; Kuyyalil, Jithesh; Cornet, Charles; Létoublon, Antoine; Levallois, Christophe; Jancu, Jean-Marc; Even, Jacky; Pedesseau, Laurent; Perrin, Mathieu; Bertru, Nicolas; Sakri, Abdallah; Boudet, Nathalie; Ponchet, A.; Râle, Pierre; Lombez, Laurent; Guillemoles, J.-F.; Marie, Xavier; Balocchi, Andrea; Turban, Pascal; Tricot, Sylvain; Modreanu, M.; Loualiche, Slimane; Le Corre, Alain;
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专利

1. Structural and optical analyses of GaP/Si and (GaAsPN/GaPN)/GaP/Si nanolayers for integrated photonics on silicon [J] . T. Nguyen Thanh, C. Robert, W. Guo, Journal of Applied Physics . 2012,第5期

机译：用于硅上集成光子的GaP / Si和（GaAsPN / GaPN）/ GaP / Si纳米层的结构和光学分析
2. Structural and optical properties of AlGaP confinement layers and InGaAs quantum dot light emitters onto GaP substrate: Towards photonics on silicon applications [J] . C. Robert, T. Nguyen Thanh, A. Iitoublon, Thin Solid Films . 2013,第AUGa31期

机译：GaP衬底上的AlGaP限制层和InGaAs量子点发光体的结构和光学性质：面向硅应用的光子学
3. Effect of GaP and GaP/InGaP insertion layers on the structural and optical properties of InP quantum dots grown by metal-organic vapor phase epitaxy [J] . S.S. Han, A. Higo, W. Yunpeng, Microelectronic Engineering . 2013,第deca期

机译：GaP和GaP / InGaP插入层对金属有机气相外延生长的InP量子点的结构和光学性质的影响
4. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications [C] . O.Durand, C. Robert, T. Nguyen Thanh, Quantum sensing and nanophotonic devices X . 2013

机译：（In，Ga）As / GaP量子点和（GaAsPN / GaPN）稀释的氮化物纳米层的结构和光学性质相干生长在GaP和Si衬底上，用于光子学和光伏应用
5. (Indium,gallium)arsenide quantum dot materials for solar cell applications: Effect of strain-reducing and strain-compensated barriers on quantum dot structural and optical properties [D] . Pancholi, Anup 2008

机译：用于太阳能电池的（铟，镓）砷化物量子点材料：应变降低和应变补偿势垒对量子点结构和光学性质的影响
6. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate [O] . Zhang Shuhui, Wang Lu, Shi Zhenwu, 2012

机译：在InP（100）衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
7. Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications [O] . Durand, Olivier, Robert, Cédric, Nguyen, Thanh Tra, 2013

机译：（In，Ga）As / GaP量子点和（GaAsPN / GaPN）稀释的氮化物纳米层的结构和光学性质相干生长在GaP和Si衬底上，用于光子学和光伏应用

Structural and optical properties of (In,Ga)As/GaP quantum dots and (GaAsPN/GaPN) diluted-nitride nanolayers coherently grown onto GaP and Si substrates for photonics and photovoltaics applications

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